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6‐4: Influence of Hole Transporting Layer Thickness on Quantum Dot Light Emitting Diodes
Author(s) -
He Xiaolong,
Shu Shi,
Xu Wei,
Cao Zhanfeng,
Xue Jianshe,
Yao Jikai
Publication year - 2017
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11557
Subject(s) - materials science , optoelectronics , quantum dot , brightness , light emitting diode , layer (electronics) , diode , leakage (economics) , coating , surface finish , composite material , optics , physics , economics , macroeconomics
The quantum dot light emitting diodes (QLEDs) based on solution process are reported for its stability and efficiency. Our work demonstrate that the thickness of hole transporting layer (HTL) play an important role in the QLEDs device. HTL may be corroded by the QD solvent with the process of spin‐coating. And so the quality of HTL, such as roughness, compactness, reliability, becomes worse. The HTL thickness loss more, the quality of QDs layer will be worse. By reducing HTL initial thickness, HTL thickness loss was reduced and the roughness and uniformity of QDs layer which is on the HTL layer was improved. Meanwhile, the efficiency and brightness of QLEDs were improved and the threshold voltage was lowered. However, leakage current increased. In the other hand, if HTL initial thickness is increased, the hole injecting layer (HIL) can be covered completely and leakage current will decrease, meanwhile, the life time can be improved. Therefore, an optimized initial thickness of HTL is very important for QLEDs. In this paper, we also will show the red passive‐matrix QLED device color.