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P‐164: Organic Light Emitting Transistors (OLETs) using ALD‐grown Al 2 O 3 dielectric
Author(s) -
Soldano Caterina,
Generali Gianluca,
Cianci Elena,
Tallarida Grazia,
Fanciulli Marco,
Muccini Michele
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.11049
Subject(s) - dielectric , materials science , optoelectronics , high κ dielectric , transistor , electrical engineering , voltage , engineering
Nanoscale dielectric films made of alumina grown by atomic layer deposition (ALD) have been implemented as high‐k dielectric material in organic light emitting transistors (OLETs). This leads to the reduction of both the threshold and operating bias regime of the devices while obtaining comparable light emission, when compared to our standard polymer‐based dielectric platform.