P‐109: Reduced Contact Resistance with MoO x  Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level | Zendy

Roh Heebum | Zendy; Roh Jeongkyun | Zendy; Shin Hyeonwoo | Zendy; kim Hyeok | Zendy; Lee Changhee | Zendy

Premium

P‐109: Reduced Contact Resistance with MoO x Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

Author(s) -

Roh Heebum,

Roh Jeongkyun,

Shin Hyeonwoo,

kim Hyeok,

Lee Changhee

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10993

Subject(s) - organic semiconductor , contact resistance , materials science , thin film transistor , layer (electronics) , semiconductor , optoelectronics , transistor , thin film , nanotechnology , electrical engineering , engineering , voltage

We investigated the contact resistance of the OTFTs based on dinaphtho[2,3‐b:2',3'‐f]thieno[3,2‐b]‐thiophene (DNTT) as a representative organic semiconductors with deep HOMO level. We confirmed a dramatic decrease in the contact resistance with the MoO x injection layer by transmission line method and y‐function method.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research