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P‐109: Reduced Contact Resistance with MoO x Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level
Author(s) -
Roh Heebum,
Roh Jeongkyun,
Shin Hyeonwoo,
kim Hyeok,
Lee Changhee
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10993
Subject(s) - organic semiconductor , contact resistance , materials science , thin film transistor , layer (electronics) , semiconductor , optoelectronics , transistor , thin film , nanotechnology , electrical engineering , engineering , voltage
We investigated the contact resistance of the OTFTs based on dinaphtho[2,3‐b:2',3'‐f]thieno[3,2‐b]‐thiophene (DNTT) as a representative organic semiconductors with deep HOMO level. We confirmed a dramatic decrease in the contact resistance with the MoO x injection layer by transmission line method and y‐function method.