P‐108: Ultra‐Thin Gas‐Barrier Films Deposited by PECVD using a Novel Precursor, TG‐4E, for OLED Devices

We have developed a novel precursor, TG‐4E, for inorganic gas barrier layer deposition by plasma enhanced chemical vapor deposition method and evaluated film thickness dependency of water vapor transmission rate (WVTR) of gas barrier layer deposited on polyethylene naphthalate (PEN) substrate. WVTR of a 240nm thick colorless barrier layer was estimated to be 9.0 × 10 −4 g/m 2 /day by gas chromatography method under 40°C, 90%RH condition. Furthermore, it was confirmed that WVTR of an 800nm thick gas barrier layer deposited on polyethylene terephthalate substrate was almost the same value as that deposited on PEN substrate.