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P‐90: Highly Efficient Quantum‐dot Light‐emitting Devices with Enhanced Charge Injection in the Simplest Trilayer Structure
Author(s) -
Qasim Khan,
Chen Jing,
Wang Baoping,
Lei Wei,
Cui Zhang
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10981
Subject(s) - quantum dot , luminance , optoelectronics , layer (electronics) , materials science , charge (physics) , electron , quantum , nanotechnology , optics , physics , quantum mechanics
Simplest but extremely efficient trilayer quantum‐dots based LED (QLED) devices were fabricated by all‐solution process, utilizing hybrid hole transport layer (h‐HTL) and electron transport layer. Red QLED devices with this h‐HTL had prominently increased luminance compared to the devices having multi hole transporting layers. Using the optimized hybrid film as the holes transporter, fascinating QLED devices have been demonstrated on the ITO substrates.