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P‐95: Inverted Tandem Architecture of Quantum‐dot Light Emitting Diodes with Solution Processed Charge Generation Layers
Author(s) -
Kim Hyo-Min,
Lee Jieun,
Hwang Eunsa,
Kim Jeonggi,
Jang Jin
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10952
Subject(s) - tandem , quantum dot , optoelectronics , diode , light emitting diode , materials science , charge (physics) , physics , quantum mechanics , composite material
An inverted tandem quantum‐dot light‐emitting diode (QLEDs) is demonstrated using solution processed charge generation layers (CGLs) for the first time. The tandem QLEDs with the CGL, consisting of green QDs (G‐QDs) for bottom and red QDs (R‐QDs) for top cells, exhibited yellow emission with current efficiency of 15.9 cd/A at 1,000 cd/m 2 .