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P‐55: Ga and In Co‐Doped Zinc Oxide Films Deposited on Flexible High Gas Barrier Films for Transparent Conductive Electrode
Author(s) -
Nagamoto Koichi,
Hara Tsutomu
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10931
Subject(s) - sheet resistance , materials science , zinc , electrode , doping , substrate (aquarium) , oxide , composite material , barrier layer , ohm , electrical conductor , transparent conducting film , layer (electronics) , optoelectronics , metallurgy , electrical engineering , chemistry , oceanography , engineering , geology
We developed the highly moisture resistance Zinc Oxide films on flexible high gas barrier PEN substrates. After the damp test, changing ratio of sheet resistance were 1.02, this value can be applied the flexible device electrode. We studied the structural, optical and electrical properties of Zinc Oxide films in detail. After a damp test at 60 °C, 95%RH for 1000 h, sheet resistance of 200 nm thickness GIZO film on deposited plastic high gas barrier substrate was 30 ohm/sq., and changing ratio of sheet resistance, before and after damp test value was 1.02.