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P‐52: Morphological and Electrical Difference in C‐axis Aligned Crystalline IGZO Films Based on the Sputtering Method
Author(s) -
Kawata Takuya,
Oota Masashi,
Ishihara Noritaka,
Nakashima Motoki,
Takasu Takako,
Kurosawa Yoichi,
Dairiki Koji,
Tsubuku Masashi,
Yamazaki Shunpei
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10926
Subject(s) - sputtering , crystallinity , materials science , crystallization , sputter deposition , silicon , optoelectronics , oxide , planar , chemical engineering , thin film , nanotechnology , composite material , metallurgy , computer science , engineering , computer graphics (images)
We investigated In‐Ga‐Zn oxide films deposited by two types of sputtering methods: planar magnetron and facing‐target. In crystallinity, we found that silicon diffused from SiO x prevents crystallization regardless of the sputtering method. In electrical property, we found that mobility of films deposited by facing‐target sputtering less depends on carrier concentration.