P‐52: Morphological and Electrical Difference in  C‐axis Aligned Crystalline IGZO Films Based on the Sputtering Method | Zendy

Kawata Takuya | Zendy; Oota Masashi | Zendy; Ishihara Noritaka | Zendy; Nakashima Motoki | Zendy; Takasu Takako | Zendy; Kurosawa Yoichi | Zendy; Dairiki Koji | Zendy; Tsubuku Masashi | Zendy; Yamazaki Shunpei | Zendy

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P‐52: Morphological and Electrical Difference in C‐axis Aligned Crystalline IGZO Films Based on the Sputtering Method

Author(s) -

Kawata Takuya,

Oota Masashi,

Ishihara Noritaka,

Nakashima Motoki,

Takasu Takako,

Kurosawa Yoichi,

Dairiki Koji,

Tsubuku Masashi,

Yamazaki Shunpei

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10926

Subject(s) - sputtering , crystallinity , materials science , crystallization , sputter deposition , silicon , optoelectronics , oxide , planar , chemical engineering , thin film , nanotechnology , composite material , metallurgy , computer science , engineering , computer graphics (images)

We investigated In‐Ga‐Zn oxide films deposited by two types of sputtering methods: planar magnetron and facing‐target. In crystallinity, we found that silicon diffused from SiO x prevents crystallization regardless of the sputtering method. In electrical property, we found that mobility of films deposited by facing‐target sputtering less depends on carrier concentration.

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