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P‐40: High Reliability Gate Driver Using Reverse Bias Method with Oxide TFTs
Author(s) -
Han Seungwoo,
Shang Guangliang,
Yao Xing,
Zheng Haoliang,
Han Mingfu,
Im Yunsik,
Huang Yinglong,
Jun Jungmok
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10909
Subject(s) - reliability (semiconductor) , thin film transistor , gate driver , threshold voltage , gate oxide , and gate , materials science , liquid crystal display , computer science , electrical engineering , voltage , electronic engineering , logic gate , optoelectronics , transistor , engineering , nanotechnology , layer (electronics) , power (physics) , physics , quantum mechanics
For the purpose of high reliability, we have developed a new gate driver which is using reverse bias method. There are several TFT seriously received gate bias stress in the gate driver. It made to seriously shift threshold voltage of those TFT. However, we could recover threshold voltage by applying negative bias at the gate terminals. Therefore the gate driver was improved stability of gate driver using reverse bias method. This method was successfully applied to 8.0‐inch 400ppi WQXGA (1600X2560) TFT‐LCD display.