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71‐5: In‐Depth Study on Large‐Area Bar‐Printing and Selective‐Area Direct Patterning of Metal Oxide Dielectrics for High‐Performance Transistor Application
Author(s) -
Yoon Myung-Han,
Lee Won-June,
Park Won-Tae,
Park Sungjun,
Noh Yong-Young
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10888
Subject(s) - materials science , bar (unit) , dielectric , optoelectronics , transistor , oxide , high κ dielectric , metal , nanotechnology , electrical engineering , metallurgy , engineering , geology , voltage , oceanography
A simple and unidirectional printing of sol‐gel metal oxide dielectric layers via bar‐coating was successfully demonstrated while the nanoscale control of ultrathin film thickness (6 ∼ 30 nm) and the excellent insulating performance were achieved. According to various physical and electrical characterizations, the present bar‐printing method enabled to fabricate smooth, dense, and uniform thin oxide films which were comparable to or slightly better than those prepared by spin‐coating. Finally, both semiconductor and dielectric films were successively patterned by bar‐printing employing the phenomenon of selective surface wetting, leading to high‐performance low‐voltage all‐solution processed metal oxide transistors.