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P‐19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin‐Film Transistors for Negative Gate Bias Stability Improvement
Author(s) -
Li GongTan,
Yang Bo-Ru,
Liu Chuan,
Lee Chia-Yu,
Wu Yuan-Chun,
Lu Po-Yen,
Deng ShaoZhi,
Shieh Han-Ping D.,
Xu NingSheng
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10879
Subject(s) - thin film transistor , materials science , doping , optoelectronics , layer (electronics) , degradation (telecommunications) , amorphous solid , transistor , active layer , stability (learning theory) , nitrogen , nanotechnology , electronic engineering , electrical engineering , computer science , crystallography , chemistry , voltage , engineering , organic chemistry , machine learning
IZTO‐TFT was inherently having high mobility; however, the stability is a concern hindering it from practical application. In this paper, we used nitrogen doping to improve the NGBS stability by a factor of 80%. Furthermore, we also adopted IZTO (high‐conductive)/IZTO:N double active layer structure to avoid mobility degradation.