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P‐18: High Reliability Amorphous‐Oxide Thin‐Film Transistors with an Expanded‐Electrode Structure
Author(s) -
Yeh Bo-Liang,
Lin Chun-Nan,
Liu Kuan-Hsien,
Chang Ting-Chang
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10877
Subject(s) - materials science , reliability (semiconductor) , optoelectronics , oxide , joule heating , thin film transistor , electrode , gate oxide , degradation (telecommunications) , transistor , amorphous solid , channel (broadcasting) , layer (electronics) , thermal , electrical engineering , composite material , engineering , metallurgy , chemistry , voltage , power (physics) , physics , organic chemistry , quantum mechanics , meteorology
This paper investigates the suppression of channel current‐induced device instability in oxide TFTs. For gate driver on array (GOA) technology, large channel width devices are used to enhance driving current. However, due to the surrounding oxide and other thermal insulating material and the low thermal conductivity of the oxide semiconductor layer, the Joule heating‐induced self‐heating effect, resulting in severe thermal degradation, will be pronounced for wider channel width devices. Accordingly, how to dissipate the heat accumulated in the channel during device operation is a crucial issue influencing device performance and reliability. In this paper, the high reliability expanded‐electrode structure TFTs are proposed to be suitable for use in GOA technology.