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69‐1: Invited Paper : Oxide TFT Development for AMLCDs and AMOLEDs
Author(s) -
Ha Yong-Min,
Kim Sung Ki,
Choi Hoon,
Lee Sang-Gul,
Park Kwon-Shik,
Kang Inbyeong
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10876
Subject(s) - thin film transistor , oled , fabrication , parasitic capacitance , commercialization , materials science , optoelectronics , liquid crystal display , capacitance , oxide , electrical engineering , nanotechnology , engineering , business , chemistry , electrode , layer (electronics) , medicine , alternative medicine , pathology , marketing , metallurgy
Various structures of oxide TFT have been developed for the commercialization of high‐end displays. Etch stopper structure were applied to both OLED and LCD products considering the uniformity and stability at Gen. 8 line. For larger OLED TV with higher resolution, self‐aligned coplanar structure has been developed to minimize parasitic capacitance. Back‐channel etched (BCE) structure has been also implemented to improve the display performance and the fabrication cost.