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P‐36: An Area‐Efficient Segmented R‐DAC Realized by Low‐Voltage Transistors for AMOLED Driver Ics
Author(s) -
Zhou Tianyu,
Leng Chuanli,
Lam Hing-Mo,
Lin Hesheng,
Zhang Shengdong,
Zhang Min
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10875
Subject(s) - amoled , resistor , voltage , low voltage , transistor , electrical engineering , materials science , overdrive voltage , electronic engineering , threshold voltage , active matrix , computer science , engineering , thin film transistor , layer (electronics) , composite material
This paper proposes a low‐voltage, segmented digital‐to‐analog converter (DAC) for active matrix organic light emitting diode (AMOLED) display. The reference voltage of each resistor string is reduced to a value within low‐voltage range in this DAC so that low‐voltage transistors can be adopted in the switch arrays and buffers to replace the middle‐voltage transistors, leading to the saving of the DAC's area. This structure consists of piecewise linear resistors and a SC‐voltage adder, which already exist in a peripheral compensation system of AMOLED. The simulation result of the proposed DAC shows that the DNL and INL are within ±0.5 LSB, and 64.28% of the switch area has been saved by adopting low‐voltage transistors.