P‐16: Single‐photon Avalanche Diode Array Integrated with InGaZnO Thin‐film Transistors for Time‐correlated Applications | Zendy

Saito Nobuyoshi | Zendy; Kimura Shunsuke | Zendy; Miura Kentaro | Zendy; Maeda Yuya | Zendy; Nakano Shintaro | Zendy; Sakano Tatsunori | Zendy; Suzuki Kazuhiro | Zendy; Funaki Hideyuki | Zendy; Nakai Yutaka | Zendy

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P‐16: Single‐photon Avalanche Diode Array Integrated with InGaZnO Thin‐film Transistors for Time‐correlated Applications

Author(s) -

Saito Nobuyoshi,

Kimura Shunsuke,

Miura Kentaro,

Maeda Yuya,

Nakano Shintaro,

Sakano Tatsunori,

Suzuki Kazuhiro,

Funaki Hideyuki,

Nakai Yutaka

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10871

Subject(s) - thin film transistor , optoelectronics , materials science , diode , transistor , single photon avalanche diode , absorption (acoustics) , avalanche diode , photon , image sensor , optics , avalanche photodiode , electrical engineering , physics , nanotechnology , detector , engineering , voltage , composite material , layer (electronics) , breakdown voltage

We propose a novel time‐of‐flight image sensor using InGaZnO (IGZO) thin‐film transistors (TFTs). IGZO TFTs were fabricated on a Si single‐photon avalanche diode (SPAD). A time‐to‐amplitude converter using IGZO TFTs operated successfully in response to the photon absorption of a SPAD. This technique contributes to realizing highly sensitive image sensors.

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