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P‐16: Single‐photon Avalanche Diode Array Integrated with InGaZnO Thin‐film Transistors for Time‐correlated Applications
Author(s) -
Saito Nobuyoshi,
Kimura Shunsuke,
Miura Kentaro,
Maeda Yuya,
Nakano Shintaro,
Sakano Tatsunori,
Suzuki Kazuhiro,
Funaki Hideyuki,
Nakai Yutaka
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10871
Subject(s) - thin film transistor , optoelectronics , materials science , diode , transistor , single photon avalanche diode , absorption (acoustics) , avalanche diode , photon , image sensor , optics , avalanche photodiode , electrical engineering , physics , nanotechnology , detector , engineering , voltage , composite material , layer (electronics) , breakdown voltage
We propose a novel time‐of‐flight image sensor using InGaZnO (IGZO) thin‐film transistors (TFTs). IGZO TFTs were fabricated on a Si single‐photon avalanche diode (SPAD). A time‐to‐amplitude converter using IGZO TFTs operated successfully in response to the photon absorption of a SPAD. This technique contributes to realizing highly sensitive image sensors.