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67‐1: Novel LTPS Technology for Large Substrate
Author(s) -
Utsugi Satoru,
Nodera Nobutake,
Matsumoto Takao,
Kobayashi Kazuki,
Oketani Taimi
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10849
Subject(s) - backplane , thin film transistor , substrate (aquarium) , materials science , optoelectronics , oled , silicon , computer science , nanotechnology , computer hardware , oceanography , geology , layer (electronics)
We developed Partial Laser Anneal Silicon (PLAS) TFT of novel LTPS technology for large substrate, which had the mobility of 28.1 cm 2 /Vs in bottom gate structure. Moreover there is no limit of substrate size, such as Gen10 and more. This innovative technology can enable the conversion from an α‐Si TFT to a high mobility TFT most easily and inexpensively. Photo‐stability of PLAS will be suitable to OLED backplane, HDR TV, and outdoor IDP.