Premium
P‐11: Development of IGZO ESL Type TFTs at G8.5 for 55” AMOLED TVs
Author(s) -
Wang Dongfang,
Yuan Guangcai,
Zhao Ce,
Zhou Bin,
Liu Guanghui,
Ding Luke,
Wang Ming,
Cheng Jun,
Liu Jun
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10847
Subject(s) - amoled , materials science , threshold voltage , optoelectronics , reliability (semiconductor) , thin film transistor , compensation (psychology) , hysteresis , electrical engineering , voltage , transistor , nanotechnology , engineering , physics , psychology , condensed matter physics , layer (electronics) , power (physics) , quantum mechanics , active matrix , psychoanalysis
The ESL type IGZO oxide semiconductor TFTs with high Vth uniformity of delta Vth less than 1V, and high reliability has been developed at BOE G8.5 for 55inch AMOLED TVs. The mobility was ~10 cm2/Vs, the threshold voltage (Vth) shifts of BTS were successfully reduced to less than 1V and the Vth shifts of hysteresis were less than 0.1V. Furthermore, 55inch AMOLED TVs based on ESL type IGZO TFTs were produced with external compensation circuits.