P‐191L:  Late‐News Poster : Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide | Zendy

Li Xiuling | Zendy; Lin Tengda | Zendy; Shin Jiyeong | Zendy; Jang Jin | Zendy

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P‐191L: Late‐News Poster : Solution Processed P‐Channel Oxide Thin Film Transistor Employing Metal Doped Nickel Oxide

Author(s) -

Li Xiuling,

Lin Tengda,

Shin Jiyeong,

Jang Jin

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10845

Subject(s) - oxide , materials science , nickel oxide , thin film transistor , doping , nickel , metal , optoelectronics , equivalent oxide thickness , transistor , channel (broadcasting) , oxide thin film transistor , nanotechnology , gate oxide , electrical engineering , metallurgy , voltage , layer (electronics) , engineering

Performance of solution processed p‐channel oxide TFTs are improved by introducing metal‐doping in nickel oxide (NiO x ). On/off current ratio of 5 × 10 4 and field‐effect mobility (µ FE ) of ∼0.67 cm 2 /V·s are achieved in the fabricated devices, making it promising for future power efficient oxide circuits and complementary oxide electronics.

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