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P‐190L: Late‐News Poster : Device Mobility >300 cm 2 /V·S Using Planarized Single‐Crystal Silicon Spheres for Large Area Display Backplanes
Author(s) -
Tarighat Roohollah Samadzadeh,
Chen Feng,
Hill Graham,
Vieth John,
Sivoththaman Siva,
Dykaar Douglas R.
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10844
Subject(s) - backplane , materials science , wafer , optoelectronics , silicon , transistor , thin film transistor , scalability , spheres , nanotechnology , electrical engineering , computer science , voltage , engineering , layer (electronics) , database , aerospace engineering
We report device mobility >300 cm 2 /V•s in a scalable process suitable for electronic backplanes for large area OLED displays. Single crystal Si spheres ~800 µm are planarized to form device substrates. Performance of transistors on spheres and Czochralski (CZ) silicon wafers are compared.