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P‐9: High Performance Back Channel Etch Metal Oxide Thin‐film Transistor with Double Active Layers
Author(s) -
Yang Jong-Heon,
Choi Ji Hun,
Pi Jae-Eun,
Kim Hee-Ok,
Park Eun-Suk,
Kwon Oh-Sang,
Nam Sooji,
Cho Sung Haeng,
Yoo Seunghyup,
Hwang Chi-Sun
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10840
Subject(s) - thin film transistor , backplane , materials science , optoelectronics , layer (electronics) , transistor , oxide thin film transistor , channel (broadcasting) , oxide , etching (microfabrication) , electrical engineering , nanotechnology , voltage , engineering , metallurgy
We fabricated high performance back channel etch (BCE) IZO/AIZTO double‐layer channel oxide thin‐film transistors (TFTs) and analyzed their electrical characteristics and photostability of the devices. The field‐effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double‐layer BCE TFT can be used as a backplane devices for next generation high performance display applications.