P‐9: High Performance Back Channel Etch Metal Oxide Thin‐film Transistor with Double Active Layers | Zendy

Yang Jong-Heon | Zendy; Choi Ji Hun | Zendy; Pi Jae-Eun | Zendy; Kim Hee-Ok | Zendy; Park Eun-Suk | Zendy; Kwon Oh-Sang | Zendy; Nam Sooji | Zendy; Cho Sung Haeng | Zendy; Yoo Seunghyup | Zendy; Hwang Chi-Sun | Zendy

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P‐9: High Performance Back Channel Etch Metal Oxide Thin‐film Transistor with Double Active Layers

Author(s) -

Yang Jong-Heon,

Choi Ji Hun,

Pi Jae-Eun,

Kim Hee-Ok,

Park Eun-Suk,

Kwon Oh-Sang,

Nam Sooji,

Cho Sung Haeng,

Yoo Seunghyup,

Hwang Chi-Sun

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10840

Subject(s) - thin film transistor , backplane , materials science , optoelectronics , layer (electronics) , transistor , oxide thin film transistor , channel (broadcasting) , oxide , etching (microfabrication) , electrical engineering , nanotechnology , voltage , engineering , metallurgy

We fabricated high performance back channel etch (BCE) IZO/AIZTO double‐layer channel oxide thin‐film transistors (TFTs) and analyzed their electrical characteristics and photostability of the devices. The field‐effect mobility of 53.2 cm2/Vs was obtained, and we expect IZO/AIZTO double‐layer BCE TFT can be used as a backplane devices for next generation high performance display applications.

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