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P‐7: High Performance LTPS Thin‐film Transistors using Low Cost Polycrystalline Silicon by Blue Laser Annealing
Author(s) -
Jin Seonghyun,
Mativenga Mallory,
Jang Jin
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10835
Subject(s) - materials science , thin film transistor , polycrystalline silicon , optoelectronics , laser , amorphous silicon , silicon , crystallinity , annealing (glass) , grain growth , crystallization , grain size , crystallite , amorphous solid , thin film , nanocrystalline silicon , laser power scaling , optics , composite material , nanotechnology , crystalline silicon , metallurgy , crystallography , chemical engineering , chemistry , physics , layer (electronics) , engineering
Crystallization of amorphous silicon (a‐Si) to polycrystalline silicon (p‐Si) by a continuous‐wave blue laser diode of wavelength 445 nm is investigated for high throughput thin‐film transistor applications (TFT). As the laser scan speed is changed at constant laser power, laser scanned p‐Si films show three kinds of grain shape that can be distinguished according to grain growth mechanism: (1) solid phase crystallization (SPC), (2) partial melting growth (PMG), and (3) full melting growth (FMG). These three growth mechanisms are as a result of different laser irradiation time to a‐Si and relative absorbed laser energy difference, therefore, they achieve different grain size and crystallinity. By using this blue laser annealing (BLA) system, we can obtain the high performance and low cost low temperature polycrystalline silicon (LTPS) TFTs with large grain size.