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P‐26: A 1058 ppi 8K4K OLED Display using a Top‐Gate Self‐Aligned CAAC Oxide Semiconductor FET
Author(s) -
Shiokawa Masataka,
Toyotaka Kouhei,
Tsubuku Masashi,
Sugimoto Kazuya,
Nakashima Motoki,
Matsuda Shinpei,
Shishido Hideaki,
Aoyama Tomoya,
Ikeda Hisao,
Eguchi Shingo,
Yamazaki Shunpei,
Nakada Masataka,
Sato Takahiro,
Abe Takayuki,
Koezuka Junichi
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10832
Subject(s) - backplane , optoelectronics , materials science , semiconductor , field effect transistor , oled , thin film transistor , transistor , oxide , electrical engineering , nanotechnology , engineering , layer (electronics) , voltage , metallurgy
A prototype of an 8.34 inch, 1058 ppi 8K4K display is fabricated. This display shall use top‐gate self‐aligned‐type crystalline oxide semiconductor field‐effect transistors as the backplane, and will be the smallest 8K display in the world.