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P‐6: Aqueous Precursor Based Solution‐Processed Metal Oxide Semiconductor
Author(s) -
Chen Huajun,
Rim You Seung,
Bae Sang-Hoon,
Yang Yang
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10830
Subject(s) - aqueous solution , semiconductor , oxide , metal , materials science , inorganic chemistry , chemical engineering , optoelectronics , chemistry , metallurgy , engineering , organic chemistry
We investigated solution‐processed oxide semiconductor films derived from various aqueous precursors. Findings show that the structure of metal complexes in the precursor solutions greatly affect decomposition temperature, impurity concentration, and more importantly, electrical performance. Also, facile redox reaction is demonstrated as one solution to remove impurities effectively.