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P‐25: Super Low Temperature Doping of Phosphorus to Poly‐Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution
Author(s) -
Suwa Akira,
Ikenoue Hiroshi,
Oizumi Hiroaki,
Nakamura Daisuke,
Okada Tatsuo
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10828
Subject(s) - phosphoric acid , doping , excimer laser , dopant , materials science , thin film , irradiation , annealing (glass) , laser , excimer , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , optics , organic chemistry , composite material , metallurgy , physics , nuclear physics
In this paper, we report on super low temperature doping of phosphorus to poly‐Si thin films using XeF excimer laser irradiation in a phosphoric acid solution. In this method, the implantation of P atoms and dopant activation can be performed simultaneously. We prepared poly‐Si films with a thickness of 50 nm, and these films were crystallized using XeF excimer laser annealing. After laser doping, the concentration of P atoms in the poly‐Si films was approximately 3.5 × 10 18 cm −3 , and the resistance of the poly‐Si films decreased by approximately 0.003 times as compared with that before laser doping.