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64‐3: Distinguished Student Paper : Bulk Accumulation Oxide TFTs for Flexible AMOLED Display with High Yield Integrated Gate Driver
Author(s) -
Um Jae Gwang,
Geng Di,
Mativenga Mallory,
Jang Jin
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10824
Subject(s) - amoled , thin film transistor , oled , materials science , active matrix , bend radius , optoelectronics , backplane , yield (engineering) , transistor , oxide , diode , flexible display , radius , bending , electrical engineering , nanotechnology , composite material , computer science , engineering , layer (electronics) , metallurgy , voltage , computer security
A 4‐inch flexible active‐matrix organic light‐emitting diode (AMOLED) display with a Bulk‐Accumulation (BA) oxide thin‐film transistors (TFT)‐backplane and BA oxide TFT‐based high yield integrated gate‐driver is demonstrated. The gate‐driver with 320 stages exhibit excellent driving ability with rising and falling times less than 1 µs — even under tensile strain induced by bending to a radius of 3 mm— which makes it suitable for flexible mobile AMOLED display applications.