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P‐5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In‐Ga‐Zn‐O Thin‐Film Transistors using Hydrogen Peroxide
Author(s) -
Park Sung Pyo,
Kim Hong Jae,
Tak Young Jun,
Hong Seonghwan,
Kim Hee Jun,
Choi Jong Sun,
Kim Hyun Jae
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10823
Subject(s) - thin film transistor , hydrogen peroxide , materials science , transistor , gallium , optoelectronics , indium , stress (linguistics) , oxide , layer (electronics) , zinc , homogeneous , nanotechnology , chemistry , electrical engineering , metallurgy , mathematics , engineering , linguistics , philosophy , organic chemistry , voltage , combinatorics
We proposed a simple dipping method for improving positive bias stability of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) with homogeneous single layer using hydrogen peroxide solution which has strong oxidation potential. The stability and field‐effect mobility of IGZO TFTs were significantly improved by controlling dipping time.