Premium
P‐2: Novel High Mobility Oxide TFT with Self‐Aligned S/D Regions Formed by Wet‐etch process
Author(s) -
Ji Kwang Hwan,
Noh Jiyong,
Yun Pil Sang,
Bae Jong Uk,
Park Kwon-Shik,
Kang InByeong
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10820
Subject(s) - materials science , etch pit density , dry etching , thin film transistor , electron mobility , oxide , optoelectronics , thermal stability , electrical resistivity and conductivity , wet oxidation , composite material , etching (microfabrication) , chemical engineering , electrical engineering , metallurgy , chemistry , layer (electronics) , biochemistry , engineering , catalysis
In this paper, we investigated the high mobility InGaSnO TFTs with self‐aligned source/drain regions (n + −IGTO) formed by wet etch process. We compared the electrical characteristics of n + −IGTO formed by dry‐etch and wet‐etch. The resistivity and thermal stability of n + −IGTO by wet‐etch was comparable to the conventional dry‐etch, 5.3x10‐3Ω·cm and 109%. The proposed IGTO TFTs exhibited high mobility of ∼20cm2/Vs, 0.47V of Vth uniformity on Gen.2 and 0.9V of PBTS 1hr reliability.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom