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P‐2: Novel High Mobility Oxide TFT with Self‐Aligned S/D Regions Formed by Wet‐etch process
Author(s) -
Ji Kwang Hwan,
Noh Jiyong,
Yun Pil Sang,
Bae Jong Uk,
Park Kwon-Shik,
Kang InByeong
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10820
Subject(s) - materials science , etch pit density , dry etching , thin film transistor , electron mobility , oxide , optoelectronics , thermal stability , electrical resistivity and conductivity , wet oxidation , composite material , etching (microfabrication) , chemical engineering , electrical engineering , metallurgy , chemistry , layer (electronics) , biochemistry , engineering , catalysis
In this paper, we investigated the high mobility InGaSnO TFTs with self‐aligned source/drain regions (n + −IGTO) formed by wet etch process. We compared the electrical characteristics of n + −IGTO formed by dry‐etch and wet‐etch. The resistivity and thermal stability of n + −IGTO by wet‐etch was comparable to the conventional dry‐etch, 5.3x10‐3Ω·cm and 109%. The proposed IGTO TFTs exhibited high mobility of ∼20cm2/Vs, 0.47V of Vth uniformity on Gen.2 and 0.9V of PBTS 1hr reliability.