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46‐3: Piezoelectric Pressure Sensor using Top‐Gate Effect with Dual‐Gate a‐IGZO TFTs
Author(s) -
Geng Di,
Han Songyi,
Seo Heejae,
Jang Jin
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10765
Subject(s) - inverter , materials science , capacitor , gate driver , pressure sensor , thin film transistor , optoelectronics , electrical engineering , dual (grammatical number) , logic gate , electronic engineering , voltage , nanotechnology , engineering , mechanical engineering , art , literature , layer (electronics)
In this study, we proposed the pressure sensor using the P(VDF‐TrFE) based pizeo‐capacitor, integrated with a dual‐gate a‐IGZO TFT. The a‐IGZO TFTs are connected in an inverter configuration and the piezo‐capacitor was connected to the floating top gate of the driving TFT. The pressure sensor generates ~ 150 mV output signals and exhibits a high degree of conformability and thus can be a good candidate for smart sensor platforms.