Premium
46‐2: Multi‐Level‐Pressure Touch Sensors with P(VDF‐TrFE) Deposited on Metal Oxide Thin Film Transistor
Author(s) -
Jin Taiyu,
Ryu Jeongjae,
Kang HanSaem,
No Kwangsoo,
Park SangHee Ko
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10764
Subject(s) - materials science , pressure sensor , thin film transistor , piezoelectricity , optoelectronics , transistor , thin film , sensitivity (control systems) , signal (programming language) , piezoelectric sensor , electrical engineering , layer (electronics) , nanotechnology , electronic engineering , composite material , voltage , computer science , engineering , mechanical engineering , programming language
We describe a novel pressure sensor, a piezoelectric film gate on an amplifying Thin Film Transistor (TFT), which could detect a multi‐level pressure and give a high sensitivity to the force. An organic piezoelectric material, Poly (vinylidene fluoride ‐ trifluoroethylene) (P(VDF‐TrFE)), was used to fabricate a transparent and flexible sensor for the touch panel in a future flexible display. It is found that the sensor could detect pressures ranging from 0 to 40kPa, which cover the human touch pressure range, and the current signals of the sensor are different when different pressures are applied on the sensing area. In the pressure testing, although repeated pressures were applied to the sensor up to 100 times, the device showed a very stable output signal.