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48‐2: Invited Paper : N‐ and P‐type Metal‐Oxides for Quantum Dot Light Emitting Diodes
Author(s) -
Kim HyoMin,
Jang Jin
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10760
Subject(s) - quantum dot , doping , metal , materials science , diode , light emitting diode , oxide , optoelectronics , layer (electronics) , nanotechnology , metallurgy
We reviewed n‐ and p‐type metal oxides for quantum‐dot light‐emitting diode (QLED) application. N‐type metal oxides such as ZnO, Al doped ZnO and Cs 2 CO 3 doped ZnO and Li doped ZnO could be used for electron injection/transport layer and p‐type oxides such as NiO x , doped NiO x , CuO x , SnO for hole injection/transport layer. And, the metal oxide n‐p junction can be also used as charge generation layer for QLED. We have applied these n‐type and p‐type metal oxides for QLEDs.