Premium
47‐4: Invited Paper : Flexible AMOLED based on Oxide TFT with High Mobility
Author(s) -
Xu Hua,
Li Min,
Wang Lei,
Xu Miao,
Ning Honglong,
Peng Junbiao
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10752
Subject(s) - thin film transistor , amoled , materials science , polyimide , optoelectronics , transistor , oxide , oxide thin film transistor , layer (electronics) , flexible electronics , nanotechnology , active matrix , electrical engineering , metallurgy , voltage , engineering
We report a flexible AMOLED display driven by oxide thin film transistors (TFTs) based on a polyimide (PI) substrate. In the oxide TFT, a triple‐stacked structure of active layer is employed to improve the mobility and stability. The fabricated TFT exhibit a high field‐effect mobility of 38.8 cm 2 V −1 s −1 , a subthreshold swing of 0.15 V/dec, and an I on /I off ratio of 10 9 . Meanwhile, Al 2 O 3 film prepared by the method of atomic layer deposition (ALD) is used as the encapsulation of AMOLED display, which demonstrating a superior water vapor transmission rate (WVTR) as low as 5.43×10 −5 g/m 2 /day estimated by Calcium (Ca) corrosion method at 40 °C/100%.