26‐3: Scalability and Homogeneity of Slot‐Die Coated Metal Oxide Semiconductor for TFTs | Zendy

Takata Ryo | Zendy; Neumann Anita | Zendy; Weber Dennis | Zendy; Pham Duy-Vu | Zendy; Anselmann Ralf | Zendy; Kitamura Yoshitaka | Zendy; Kakimura Takashi | Zendy; Suzuki Satoshi | Zendy; Minami Shigeki | Zendy; Kodama Mitsumasa | Zendy

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26‐3: Scalability and Homogeneity of Slot‐Die Coated Metal Oxide Semiconductor for TFTs

Author(s) -

Takata Ryo,

Neumann Anita,

Weber Dennis,

Pham Duy-Vu,

Anselmann Ralf,

Kitamura Yoshitaka,

Kakimura Takashi,

Suzuki Satoshi,

Minami Shigeki,

Kodama Mitsumasa

Publication year - 2016

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10669

Subject(s) - homogeneity (statistics) , materials science , annealing (glass) , indium , coating , die (integrated circuit) , thin film transistor , oxide , pressing , photoresist , optoelectronics , scalability , spin coating , metallurgy , composite material , nanotechnology , layer (electronics) , computer science , machine learning , database

An indium oxide based precursor solution has been developed by spin‐coating method. In order to apply this material to a mass production, material, process and equipment optimizations for slot die coating have been implemented. Slot die coating is a cost‐effective, scalable process and already applied to photoresist materials in the display industry. The indium oxide based precursor solution has been coated on bare glasses and TFT substrates by a mass production type slot die coater. Mobility of over 10cm 2 /Vs is achieved for the first time for large area at annealing temperatures of 350°C. The homogeneity of the film will be presented.

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