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26‐3: Scalability and Homogeneity of Slot‐Die Coated Metal Oxide Semiconductor for TFTs
Author(s) -
Takata Ryo,
Neumann Anita,
Weber Dennis,
Pham Duy-Vu,
Anselmann Ralf,
Kitamura Yoshitaka,
Kakimura Takashi,
Suzuki Satoshi,
Minami Shigeki,
Kodama Mitsumasa
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10669
Subject(s) - homogeneity (statistics) , materials science , annealing (glass) , indium , coating , die (integrated circuit) , thin film transistor , oxide , pressing , photoresist , optoelectronics , scalability , spin coating , metallurgy , composite material , nanotechnology , layer (electronics) , computer science , machine learning , database
An indium oxide based precursor solution has been developed by spin‐coating method. In order to apply this material to a mass production, material, process and equipment optimizations for slot die coating have been implemented. Slot die coating is a cost‐effective, scalable process and already applied to photoresist materials in the display industry. The indium oxide based precursor solution has been coated on bare glasses and TFT substrates by a mass production type slot die coater. Mobility of over 10cm 2 /Vs is achieved for the first time for large area at annealing temperatures of 350°C. The homogeneity of the film will be presented.