Premium
26‐2: 5.8” Ultra‐Narrow Border LCD with Soluble Metal‐Oxide TFTs and Integrated with GIP Circuit
Author(s) -
Chena YuHsien,
Chianga ShinChuan,
Wua DerChun,
Tsenga KuoHsing,
Lina YiHsien,
Changa HsiMing,
Huanga YenYu,
Phamb DuyVu,
Sub KuoHui,
Marinkovicb Marko,
Weberb Dennis,
Merkulovb Alexey,
Anselmannb Ralf
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10667
Subject(s) - backplane , materials science , liquid crystal display , thin film transistor , optoelectronics , die (integrated circuit) , oxide , electrical engineering , nanotechnology , engineering , metallurgy , layer (electronics)
For the first time, solution based metal‐oxide semiconductor is successfully implemented in TFT‐LCD production line. The well‐known slot‐die coating technology is used to deposit liquid phase semiconductor on Gen4 substrates. Fabricated backplane with integrated gate‐in‐panel (GIP) circuitry is used to develop 5.8″ TFT‐LCD with ultra‐narrow border (< 1 mm), a first panel of its kind which is closed to full commercialization.