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12‐4: TFT Integrated Gate Driver with V TH Shift Compensable Low‐Level Holding Unit
Author(s) -
Hu Zhijin,
Wang Cuicui,
Liao Congwei,
Cao Shijie,
Fan Jia,
Zhao Qiang,
Zhang Shengdong
Publication year - 2016
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10619
Subject(s) - compensation (psychology) , threshold voltage , thin film transistor , voltage , unit (ring theory) , electrical engineering , gate driver , optoelectronics , materials science , gate voltage , engineering , transistor , mathematics , psychology , nanotechnology , mathematics education , layer (electronics) , psychoanalysis
A TFT integrated gate driver with threshold voltage (V TH ) shift compensable low‐level holding (LLH) unit is proposed. The gate overdrive voltage (V GOV ) of LLH TFTs is kept small and constant due to the compensation effect during the LLH period, leading to much suppressed ΔV TH and enlarge ΔV TH tolerance. Simulation results show that the proposed gate driver is able to work properly even the ΔV TH is up to around (V H −V L ). This indicates that the proposed gate driver is of long life.