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Paper No S2.3: Uniform Quantum Dot Light Emitting Diodes Fabricated by Transfer Mold Method
Author(s) -
Nakamoto Masayuki,
Moon Jonghyun
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10547
Subject(s) - light emitting diode , materials science , optoelectronics , quantum dot , mold , transfer printing , diode , brightness , anode , substrate (aquarium) , layer (electronics) , cathode , optics , nanotechnology , composite material , electrode , electrical engineering , chemistry , physics , oceanography , geology , engineering
Highly uniform quantum dot light emitting diodes (QD LEDs) have been developed by using Transfer Mold method to realize highly efficient and bright displays. The brightness of Transfer Mold QD LEDs is as high as 633 times, being compared with those of QD LEDs by using a flat substrate. Transfer Mold QD LEDs have uniform Mold arrays, QDs in the Molds, and SiO 2 layer patterned on the flat area having no Molds. The SiO 2 layer blocks the leakage current between cathode and anode. Low leakage current due to QDs in the uniform Mold arrays with the patterned SiO 2 layer, improves carrier‐injection efficiency. The QD LEDs by using a flat substrate, have non‐uniform QD's area due to the QD particle's aggregation, and have low brightness because of the high leakage current. The Transfer Mold QD LEDs can realize the highly efficient QD LEDs.