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Paper No S12.2: High‐Mobility Indium Oxide Thin‐Film Transistors by Means of Plasma‐Enhanced Atomic Layer Deposition
Author(s) -
Yeom H. I.,
Ko J. B.,
Hwang C.S.,
Cho S.,
Park S.H. K.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10529
Subject(s) - atomic layer deposition , indium , materials science , thin film transistor , layer (electronics) , deposition (geology) , plasma , optoelectronics , oxide , transistor , thin film , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , metallurgy , voltage , physics , engineering , environmental chemistry , paleontology , quantum mechanics , sediment , biology
Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200° C showed a field‐effect mobility of as high as 31 cm 2 /V s in linear region.