Paper No S12.2: High‐Mobility Indium Oxide Thin‐Film Transistors by Means of Plasma‐Enhanced Atomic Layer Deposition | Zendy

Yeom H. I. | Zendy; Ko J. B. | Zendy; Hwang C.S. | Zendy; Cho S. | Zendy; Park S.H. K. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Paper No S12.2: High‐Mobility Indium Oxide Thin‐Film Transistors by Means of Plasma‐Enhanced Atomic Layer Deposition

Author(s) -

Yeom H. I.,

Ko J. B.,

Hwang C.S.,

Cho S.,

Park S.H. K.

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10529

Subject(s) - atomic layer deposition , indium , materials science , thin film transistor , layer (electronics) , deposition (geology) , plasma , optoelectronics , oxide , transistor , thin film , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , metallurgy , voltage , physics , engineering , environmental chemistry , paleontology , quantum mechanics , sediment , biology

Indium oxide film has been deposited by plasma‐enhanced atomic layer deposition and adopted as channel materials for high‐mobility thin‐film transistors. The resultant device fabricated at temperature of 200° C showed a field‐effect mobility of as high as 31 cm 2 /V s in linear region.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research