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Paper No S10.3: Efficiency Enhancement of InP‐Based Inverted QD‐LEDs by Polyethylenimine‐Modified Al:ZnO Layer
Author(s) -
Kim Yohan,
Ippen Christian,
Wedel Armin
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10522
Subject(s) - polyethylenimine , materials science , optoelectronics , light emitting diode , quantum dot , diode , layer (electronics) , indium phosphide , quantum efficiency , doping , nanotechnology , chemistry , gallium arsenide , transfection , biochemistry , gene
In this paper, we report efficiency enhancement of indium phosphide (InP) quantum dot‐based light‐emitting diodes (QD‐LEDs) using polyethylenimine (PEI) surface modifier. Adapting solution processed PEI layer on top of the aluminum‐doped zinc oxide (Al:ZnO) nanoparticle (NP) layer, the leakage current of inverted device was suppressed and electron injection into conduction band of InP/ZnSe/ZnS QDs also facilitated by interfacial dipoles of thin PEI layer. As a results, the current efficiency was dramatically increased from 0.07 cd/A to 2.84 cd/A.