Premium
Paper No P32: Impact of Halogen Ion Size of Chemical Agent System on Electrical and Optical Characteristics of rGO Layers
Author(s) -
Eskandari V.,
Fathollahi M. R.,
Mohajerani E.,
Fallahi A.,
Tahani P.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10514
Subject(s) - graphene , oxide , halogen , ion , materials science , halide , chloride , bromide , layer (electronics) , sheet resistance , hydrogen , inorganic chemistry , chemical engineering , nanotechnology , chemistry , organic chemistry , metallurgy , alkyl , engineering
In the current paper, we compare the effect of different hydrogen halide acid agent systems in chemical reduction of graphene oxide (GO) thin layers. We observe the large iodine ion can facilitate the reduction reaction in comparison with bromide and chloride counterpart ions. We show the sheet resistance of the graphene layer decreases by about six orders of magnitude due to efficient reduction of the graphene oxide.