Paper No P24: Effect of Mechanical Strain on Charge‐Transfer V T ‐Shift Compensation Circuits for Flexible AMOLED Displays | Zendy

Papadopoulos Nikolas P. | Zendy; Lee CzangHo | Zendy; Sachdev Manoj | Zendy; Wong William S. | Zendy

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Paper No P24: Effect of Mechanical Strain on Charge‐Transfer V T ‐Shift Compensation Circuits for Flexible AMOLED Displays

Author(s) -

Papadopoulos Nikolas P.,

Lee CzangHo,

Sachdev Manoj,

Wong William S.

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10506

Subject(s) - materials science , polyethylene naphthalate , thin film transistor , amoled , optoelectronics , threshold voltage , substrate (aquarium) , amorphous solid , flexible display , electronic circuit , transistor , flexible electronics , voltage , electrical engineering , composite material , polyethylene terephthalate , active matrix , crystallography , oceanography , chemistry , layer (electronics) , geology , engineering

A 4‐thin‐film transistor (TFT) voltage‐programmed pixel circuit is fabricated using low‐temperature (170°C) hydrogenated amorphous silicon (a‐Si:H) TFTs process on flexible polyethylene naphthalate substrate. The electrical stability of the 4‐TFT circuit was characterized under mechanical strain and flat (unstrained) conditions. The compensated drive current degraded approximately 5% under electrical bias and tensile strain. This result was similar to pixel circuits fabricated at high temperature (300°C) on rigid glass substrates.

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