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Paper No P24: Effect of Mechanical Strain on Charge‐Transfer V T ‐Shift Compensation Circuits for Flexible AMOLED Displays
Author(s) -
Papadopoulos Nikolas P.,
Lee CzangHo,
Sachdev Manoj,
Wong William S.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10506
Subject(s) - materials science , polyethylene naphthalate , thin film transistor , amoled , optoelectronics , threshold voltage , substrate (aquarium) , amorphous solid , flexible display , electronic circuit , transistor , flexible electronics , voltage , electrical engineering , composite material , polyethylene terephthalate , active matrix , crystallography , oceanography , chemistry , layer (electronics) , geology , engineering
A 4‐thin‐film transistor (TFT) voltage‐programmed pixel circuit is fabricated using low‐temperature (170°C) hydrogenated amorphous silicon (a‐Si:H) TFTs process on flexible polyethylene naphthalate substrate. The electrical stability of the 4‐TFT circuit was characterized under mechanical strain and flat (unstrained) conditions. The compensated drive current degraded approximately 5% under electrical bias and tensile strain. This result was similar to pixel circuits fabricated at high temperature (300°C) on rigid glass substrates.