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Paper No P22: A Study on the Characteristics of IZO‐TFTs with High‐k HfSiO x Gate Insulator Annealed in Various Conditions
Author(s) -
Lim Yoo Seong,
Im Yong Jin,
Ha Seung Soo,
Park Chan Hee,
Jang Minhyung,
Choi Seungil,
Park Jiin,
Yi Moonsuk
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10504
Subject(s) - materials science , annealing (glass) , x ray photoelectron spectroscopy , threshold voltage , optoelectronics , sputtering , surface roughness , insulator (electricity) , thin film transistor , surface finish , gate dielectric , saturation (graph theory) , voltage , analytical chemistry (journal) , electrical engineering , thin film , nanotechnology , composite material , transistor , nuclear magnetic resonance , chemistry , physics , layer (electronics) , engineering , mathematics , combinatorics , chromatography
Abstract In this work, we investigate the enhanced performance of IZO‐based TFTs with HfSiO x gate insulators. HfSiO x gate insulators, annealed at various conditions, are deposited by co‐sputtering of HfO 2 and Si. The HfSiO x structural properties are investigated using AFM, XRD, and XPS techniques. Furthermore, the electrical characteristics are analyzed to investigate the effect of annealing conditions. We obtain optimal results for TFTs with HfSiOx gate insulators annealed for 1 h at 100°C, with a saturation mobility of 1.2 cm 2 /V·s, threshold voltage of 2.2 V, I on /I off ratio of 2.0 × 10 6 , and insulator surface roughness of 0.187 nm RMS.