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Paper No P18: Study of Interfacial Treatment on the Metal‐Oxide Electron Transport Layer in the InP Quantum Dot Light‐Emitting Diodes
Author(s) -
Kim J.,
Jang I.,
Ippen C.,
Kim Y.,
Kim W. K.,
Wedel A.,
Park S. K.,
Han C. J.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10500
Subject(s) - light emitting diode , quantum dot , optoelectronics , materials science , diode , annealing (glass) , oxide , metal , composite material , metallurgy
In this article, we describe the effect of ethanolamine (EA) surface treatment on the inverted InP quantum dot light‐emitting diodes (QD‐LEDs) with inorganic metal oxide layers. The efficiency of the inverted QD‐LEDs was significantly enhanced by EA treatment and optimization of the ZnO annealing temperature.