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21.4: Deposition Conditions and HRTEM Characterization of CAAC IGZO
Author(s) -
Lynch David M.,
Zhu Bin,
Levin Barnaby D. A.,
Muller David A.,
Ast Dieter G.,
Greene Raymond G.,
Thompson Michael O.
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10479
Subject(s) - high resolution transmission electron microscopy , materials science , nanocrystalline material , nucleation , substrate (aquarium) , crystallinity , transmission electron microscopy , thin film , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , composite material , oceanography , organic chemistry , chromatography , geology
Crystallinity and texture of c‐axis aligned crystal indium gallium zinc oxide (CAAC IGZO) films deposited by RF reactive sputtering were studied and characterized over a range of deposition conditions. The characteristic CAAC (009) peak at 2θ=30° was observed by X‐ray diffraction, and nanocrystalline domain texture was determined using a general area detector diffraction system (GADDS). Highly ordered CAAC films were obtained near the InGaZnO 4 composition at a substrate temperature of 310°C and in 10% O 2 . High‐resolution transmission electron microscopy (HRTEM) confirmed the formation of CAAC showing 2‐3 nm domains aligned over 15 nm x 15 nm fields of view. Cross‐section HRTEM of the CAAC/substrate interface shows formation of an initially disordered IGZO layer prior to CAAC formation, suggesting a nucleation mechanism similar to ZnO thin films.