21.3: A Novel 5‐Mask Etch‐Stopper Pixel Structure with A Short Channel Oxide Semiconductor TFT | Zendy

Yang JoonYoung | Zendy; Jung SungHoon | Zendy; Woo ChangSeung | Zendy; Lee JuYun | Zendy; Jun Myungchul | Zendy; Kang InByeong | Zendy; Park JungHo | Zendy

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21.3: A Novel 5‐Mask Etch‐Stopper Pixel Structure with A Short Channel Oxide Semiconductor TFT

Author(s) -

Yang JoonYoung,

Jung SungHoon,

Woo ChangSeung,

Lee JuYun,

Jun Myungchul,

Kang InByeong,

Park JungHo

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10477

Subject(s) - thin film transistor , pixel , materials science , channel (broadcasting) , optoelectronics , capacitance , layer (electronics) , parasitic capacitance , electrical engineering , computer science , nanotechnology , chemistry , engineering , artificial intelligence , electrode

In order to solve the main issues of etch‐stopper (ES) pixel structure (mask steps, parasitic capacitance C gs , TFT channel length) in a‐IGZO pixel structure of AMLED, new 5‐mask ES a‐IGZO pixel structure was investigated. TFT channel length of 5 µm could be achieved by self‐aligned damage preventing layer. We could achieve good characteristics and reliability of short‐channel‐length (under 5 µm) ES TFTs. And also C gs could be reduced more than 30%.

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