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21.2: Highly Reliable Oxide Thin Film Transistor with Novel Oxide Passivation Layers By All‐Printing Processes
Author(s) -
Matsumoto Shinji,
Saotome Ryoichi,
Hirano Yukiko,
Sone Yuji,
Arae Sadanori,
Kusayanagi Minehide,
Nakamura Yuki,
Ueda Naoyuki,
Yamada Katsuyuki
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10475
Subject(s) - passivation , thin film transistor , materials science , oxide , optoelectronics , oxide thin film transistor , threshold voltage , transistor , voltage , layer (electronics) , nanotechnology , electrical engineering , metallurgy , engineering
We have developed highly reliable oxide TFT arrays by allprinted maskless process from gate to passivation layers with 100 ppi RGB resolution. The threshold voltage shifts under positive and negative bias‐temperature‐stress at 50 °C after 10 5 seconds were less than 0.8 and 0.3 V, respectively.