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20.3: Optimizing the Balance of Holes and Electrons in Inverted Quantum Dot Light‐Emitting Diodes by Inserting Electron Transportation Barrier Layer
Author(s) -
Jiang Yibin,
Tang Haoning,
Chen Shuming,
Kwok HoiSing
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10463
Subject(s) - quantum dot , electron , diode , optoelectronics , layer (electronics) , materials science , barrier layer , electron transport chain , balance (ability) , rectangular potential barrier , physics , nanotechnology , chemistry , medicine , physical medicine and rehabilitation , biochemistry , quantum mechanics
In this study, the hole‐electron balance of quantum dot lightemitting diodes (QDLED) was tuned in order to achieve efficiency enhancement. This hole‐electron balance optimization was realized by inserting thin barrier layer in the electron transportation layer. Although the current density was slightly sacrificed because of the electron blocking of the barrier layer, the charge balance was improved hence leading to 123% efficiency enhancement.