33.5: Fabrication of an All‐Screen Printed Oxide Semiconductor Thin Film Transistor Active‐Matrix Backplane | Zendy

Fukada Kazuhiro | Zendy; Maeda Yojiro | Zendy; Liu Xi Yun | Zendy; Matoba Akinari | Zendy; Takagi Shinji | Zendy; Inoue Satoshi | Zendy; Shimoda Tatsuya | Zendy

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33.5: Fabrication of an All‐Screen Printed Oxide Semiconductor Thin Film Transistor Active‐Matrix Backplane

Author(s) -

Fukada Kazuhiro,

Maeda Yojiro,

Liu Xi Yun,

Matoba Akinari,

Takagi Shinji,

Inoue Satoshi,

Shimoda Tatsuya

Publication year - 2015

Publication title -

sid symposium digest of technical papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.351

H-Index - 44

eISSN - 2168-0159

pISSN - 0097-966X

DOI - 10.1002/sdtp.10437

Subject(s) - thin film transistor , backplane , active matrix , materials science , optoelectronics , transistor , fabrication , semiconductor , oxide thin film transistor , flexible display , electrode , leakage (economics) , nanotechnology , electrical engineering , voltage , engineering , chemistry , layer (electronics) , medicine , alternative medicine , pathology , economics , macroeconomics

An all‐screen printed oxide semiconductor thin film transistor (TFT) active‐matrix backplane (AMBP) was investigated. We introduced a new pixel layout which reduces the leakage current between source and drain electrodes. As a result, the TFT‐AMBP with 33.8 ppi for an electrophoretic display was successfully fabricated by using screen printing for the first time. The display size and resolution are 750 mm × 550mm and 33.8 ppi, respectively.

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