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33.5: Fabrication of an All‐Screen Printed Oxide Semiconductor Thin Film Transistor Active‐Matrix Backplane
Author(s) -
Fukada Kazuhiro,
Maeda Yojiro,
Liu Xi Yun,
Matoba Akinari,
Takagi Shinji,
Inoue Satoshi,
Shimoda Tatsuya
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10437
Subject(s) - thin film transistor , backplane , active matrix , materials science , optoelectronics , transistor , fabrication , semiconductor , oxide thin film transistor , flexible display , electrode , leakage (economics) , nanotechnology , electrical engineering , voltage , engineering , chemistry , layer (electronics) , medicine , alternative medicine , pathology , economics , macroeconomics
An all‐screen printed oxide semiconductor thin film transistor (TFT) active‐matrix backplane (AMBP) was investigated. We introduced a new pixel layout which reduces the leakage current between source and drain electrodes. As a result, the TFT‐AMBP with 33.8 ppi for an electrophoretic display was successfully fabricated by using screen printing for the first time. The display size and resolution are 750 mm × 550mm and 33.8 ppi, respectively.