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33.2: Neuron MOS Devices using Thin‐Film Transistors
Author(s) -
Kimura Mutsumi,
Shimada Kenji,
Matsuda Tokiyoshi
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10431
Subject(s) - inverter , transistor , thin film transistor , materials science , artificial neural network , logic gate , neuron , voltage , threshold voltage , electrical engineering , artificial neuron , computer science , optoelectronics , electronic engineering , nanotechnology , artificial intelligence , engineering , neuroscience , layer (electronics) , psychology
We have developed neuron MOS devices using TFTs. They possessfloating and multiple input gate terminals capacitively connected.We evaluated neuron MOS transistors, a neuron inverter, whichcan be a variable threshold voltage inverter, and an almighty logiccircuit. The neuron MOS devices have great potential for artificialneural networks.