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63.3: Fabrication of 8k4k Organic EL Panel using High‐Mobility IGZO Material
Author(s) -
Okazaki Kenichi,
Kanemura Hiroshi,
Kurosaki Daisuke,
Shima Yukinori,
Koezuka Junichi,
Kawashima Susumu,
Shiokawa Masataka,
Miyake Hiroyuki,
Yamazaki Shunpei
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10415
Subject(s) - fabrication , materials science , stack (abstract data type) , optoelectronics , semiconductor , oxide , electron mobility , power consumption , organic semiconductor , engineering physics , power (physics) , metallurgy , computer science , engineering , medicine , alternative medicine , physics , pathology , quantum mechanics , programming language
A 13.3‐inch 8k4k OLED display using an oxide semiconductor with high‐mobility IGZO material was fabricated. It was found that the use of a higher mobility material can decrease the size and power consumption of a gate driver. Furthermore, a stack of such oxide semiconductor layers can increase process stability.