Premium
28.2: Invited Paper : Reverse Intersystem Crossing From High‐lying Triplet Energy Levels to Excited Singlet: A “Hot excition” Path for OLEDs
Author(s) -
Hu Dehua,
Yao Liang,
Yang Bing,
Ma Yuguang
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10380
Subject(s) - intersystem crossing , singlet state , oled , excited state , optoelectronics , materials science , photoluminescence , exciton , photochemistry , chemistry , physics , atomic physics , nanotechnology , condensed matter physics , layer (electronics)
The photophysical process of reverse intersystem crossing (RISC) from high‐lying triplet levels to singlet manifold is innovatively utilized to enhance the efficiency of fluorescent organic light‐emitting diodes (FOLEDs) by simultaneously harvesting singlet and triplet excitons. Efforts are devoted to developing materials with high photoluminescence efficiency and effective RISC.