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57.2: Electrical Characterization of BCE‐TFTs with a‐IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections
Author(s) -
Ochi Mototaka,
Morita Shinya,
Takanashi Yasuyuki,
Tao Hiroaki,
Goto Hiroshi,
Kugimiya Toshihiro,
Kanamaru Moriyoshi
Publication year - 2015
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1002/sdtp.10359
Subject(s) - thin film transistor , etching (microfabrication) , materials science , fabrication , optoelectronics , oxide thin film transistor , characterization (materials science) , amorphous solid , transistor , semiconductor , oxide , nanotechnology , metallurgy , electrical engineering , layer (electronics) , crystallography , chemistry , engineering , voltage , medicine , alternative medicine , pathology
We have developed an amorphous In‐Ga‐Zn‐Sn‐O (a‐IGZTO) semiconducting thin film for back channel etching (BCE) type thin‐film transistors (TFTs). As the material is highly stable to acid etchants, the fabrication of the IGZTO TFTs having both Al and Cu interconnections is viable by back channel etching using conventional etchant such as PAN and H 2 O 2 ‐based etchants.